Application of Semiconductor Gases
Time : 2024-06-21

1. Silane (SiH4) : toxic. Silane is mainly used in the semiconductor industry for the production of high-purity polysilicon, silica film, silicon nitride film, polysilicon isolation layer, polysilicon ohmic contact layer and heterogenous or homogeneous silicon epitaxial growth raw materials, as well as ion implantation sources and laser media, and can also be used to make solar cells, optical fiber and photoelectric sensors.

2. Germane (GeH4) : highly toxic. Germanium metal is a good semiconductor material, germanane in the electronics industry is mainly used for chemical vapor deposition, forming a variety of different silicon germanium alloys for the manufacture of electronic components.

3. Phosphane (PH3) : highly toxic. It is mainly used as dopant for silane epitaxy and impurity source for phosphorus diffusion. At the same time, it is also used in polysilicon chemical vapor deposition, epitaxial GaP material, ion implantation process, MOCVD process of compound semiconductor, phosphorus silicon glass (PSG) passivation film preparation and other processes.

4. Arsenane (AsH3) : highly toxic. It is mainly used as N-type dopants in epitaxy and ion implantation processes.

5. Antimony hydride (SbH3) : highly toxic. Used as a gas phase dopant in the manufacture of N-type silicon semiconductors.

6. Ethyl borane (B2H6) : suffocating odor of highly toxic gas. Borane is a dopant for gaseous impurity sources, ion implantation and boron doped oxidation diffusion, and it has also been used as a high-energy fuel for rockets and missiles.

7. Boron Trifluoride (BF3) : toxic, extremely irritating. It is mainly used as P-type dopant, ion implantation source and plasma etching gas.

8. Nitrogen trifluoride (NF3) : strong toxicity. Mainly used for chemical vapor deposition (CVD) equipment cleaning. Nitrogen trifluoride can be used alone or in combination with other gases as etching gases for plasma processes, e.g., NF3, NF3/Ar, NF3/He for etching the silicon compound MoSi2; NF3/CCl4 and NF3/HCl are used for etching both MoSi2 and NbSi2.

9. Phosphorus trifluoride (PF3) : Extremely toxic. As a gaseous phosphorus ion implantation source.

10. Silicon tetrafluoride (SiF4) : in the case of water to produce highly corrosive fluorosilicic acid. It is mainly used for plasma etching of silicon nitride (Si3N4) and tantalum silicide (TaSi2), P-type doping of light-emitting diode, ion implantation process, epitaxial deposition diffusion silicon source and high purity quartz glass for optical fiber.

11. Phosphorus pentafluoride (PF5) : Produces toxic hydrogen fluoride fumes in humid air. Used as a gaseous phosphorus ion implantation source.

12. Carbon tetrafluoride (CF4) : as a commonly used working gas in plasma etching process, it is a plasma etching agent of silicon dioxide and silicon nitride.

13. Hexafluoroethane (C2H6) : in the plasma process as a dry corrosion gas of silicon dioxide and phosphorus silicon glass.

14. Perfluoropropane (C3F8) : in the plasma etching process, as a silicon dioxide film, phosphorus silicon glass film etching gas.


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