1. Epitaxial (growth) mixture: in the semiconductor industry, the method of chemical vapor deposition is selected on a carefully selected substrate, and the gas used to grow one or more layers of material is called epitaxial gas. The commonly used silicon epitaxial gases are dichlorodisilicon (DCS), silicon tetrachloride (SiCl4) and silane. It is mainly used for epitaxial silicon deposition, silicon oxide film deposition, silicon nitride film deposition, amorphous silicon film deposition of solar cells and other photoreceptors, etc. Epitaxy is a process in which a single crystal material is deposited and grown on the surface of a substrate.

2. Chemical vapor deposition (CVD) with mixed gas: CVD is the use of volatile compounds, through the gas phase chemical reaction deposition of some elements and compounds a method, that is, the application of gas phase chemical reaction of a film forming method. The chemical vapor deposition (CVD) gas used varies depending on the type of film formed.

3. Doping mixture: in the manufacturing of semiconductor devices and integrated circuits, imported electronic gas plus wechat bluceren consultation and understanding. Some impurities are incorporated into the semiconductor material to make the material have the required type of conduction and certain resistivity to manufacture resistance, PN junction, buried layer, etc. The gas used in the doping process is called doping gas. It mainly includes arbutane, phosphorane, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride, boron trifluoride, ethylborane and so on. Usually, the doping source is mixed with carrier gases (such as argon and nitrogen) in the source cabinet. After mixing, the air flow is continuously injected into the diffusion furnace and surrounded by the chip. The dopant is deposited on the surface of the chip, and then reacts with silicon to form doped metal and migrates into silicon.

4. Etching mixture: etching is the substrate without photoresist masking processing surface (such as metal film, silicon oxide film, etc.) etched away, and the photoresist masking area preserved, in order to obtain the required imaging graphics on the surface of the substrate. Etching methods include wet chemical etching and dry chemical etching. The gas used in dry chemical etching is called etching gas. Etching gases are usually fluoride gases (halides), such as carbon tetrafluoride, nitrogen trifluoride, trifluoromethane, hexafluorothane, perfluoropropane, etc.