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Product Description
CAS No.: 10035-10-6
EINECS No.: 233-113-0
UN No.: UN1048
Purity: 99.99%-99.999%
Dot Class: 2.3
Hydrogen Bromide (HBr) Gas Semiconductor

Hydrogen Bromide (HBr) Gas is a highly corrosive, colorless, non-flammable gas with a pungent odor. In the electronics industry, it serves as a crucial etchant for semiconductor manufacturing, offering excellent anisotropy and precise etching control. It is particularly valued for its effectiveness in patterning silicon-based materials and high-k dielectrics, enabling the production of advanced microelectronic devices.
HBr gas is one of the key process gases in plasma etching for semiconductors. It is characterized by high etch selectivity to photoresist masks and silicon, making it indispensable for defining critical features in silicon, polysilicon, and silicon-germanium alloys, as well as for sidewall passivation to achieve vertical etch profiles.
HBr CAS NO.: 10035-10-6
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Formula, Structure and Specifications of HBr Gas
The hydrogen bromide chemical formula is HBr and its molar mass is 80.91 g mol⁻¹. Its molecule consists of a hydrogen atom covalently bonded to a bromine atom. It is highly soluble in water, forming hydrobromic acid.
H—Br
Applications of Hydrogen Bromide Gas
1.Hydrogen Bromide (HBr) plasma is extensively used in the anisotropic dry etching of silicon (Si), polysilicon, and silicon-germanium (SiGe) in the fabrication of integrated circuits, transistors, and memory chips.
2.Hydrogen Bromide is an essential reagent in organic synthesis. It is used to open epoxides and lactones, in the synthesis of bromoacetals, and as a catalyst for alkylation and extraction processes in the pharmaceutical and chemical industries.
3.HBr serves as a precursor for the production of inorganic bromides and as a brominating agent in various industrial chemical processes.
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